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BFR181T
NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz
3
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA

2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR181T
Maximum Ratings Parameter
Marking RFs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 20 2 175 150 mW C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 79C 1)
-65 ... 150 -65 ... 150
405
K/W
1
Aug-09-2001
BFR181T
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
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Aug-09-2001
BFR181T
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ms 2G ma
Unit max. 0.4 dB GHz pF
typ. 8 0.26 0.17 0.3
fT Ccb Cce Ceb F
6 -
Gms -
1.45 1.8 19.5
-
Gma
-
13.5
-
|S21e|2 15.5 10.5 -
= |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
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Aug-09-2001
BFR181T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.0010519 fA 22.403 1.7631 5.1127 1.6528 6.6315 1.8168 17.028 1.0549 1.1633 2.7449 0 3 V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 96.461 0.12146 16.504 0.24951 9.9037 2.1372 0.73155 0.33814 0 0.30013 0 0 0.99768 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90617 12.603 0.87757 0.01195 0.69278 2.2171 0.43619 0.12571 319.69 0.082903 0.75 1.11 300 fA fA mA -
V -
V fF V eV K
deg fF -
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L1 =
C4 C1 L2 B L3 C
0.762 0.706 0.382 62 84 180 7 40 48
L2 = L3 = C1 =
C'
B'
Transistor Chip E'
C2 = C3 = C4 = C5 = C6 =
C6
C2
L1
C3
C5
fF fF
E
EHA07524
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
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Aug-09-2001
nH nH nH fF fF fF

BFR181T
Total power dissipation Ptot = f (TS )
200
mW
160 140
P tot
120 100 80 60 40 20 0 0 120 C
20
40
60
80
100
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
Ptotmax / PtotDC
RthJS
10 2
10 1
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-09-2001
BFR181T
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
0.4
pF GHz
9
10V 8V
0.3
7
5V
Ccb
6
fT
5
0.25
3V
0.2 4
2V
0.15 3 0.1 2 1 0 0
1V 0.7V
0.05
0 0
5
10
15
V
25
5
10
mA
20
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
22
10V dB 5V
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
15
10V 5V dB 3V 3V
G ma
2V
G
16
2V
9
13
6
1V 1V
10
0.7V
3
0.7
7 0
4
8
12
mA
20
0 0
4
8
12
mA
20
IC
IC
6
Aug-09-2001
BFR181T
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
22
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
22
8V
IC=5mA
dB 0.9GHz dBm
5V
18
3V
G
16
0.9GHz 1.8GHz
IP 3
14
2V
14
10
12 6
1.8GHz
1V
10 2 8
6 0
3
6
V
12
-2 0
5
10
mA
20
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
45
dB
Power Gain |S21|2= f(f)
V CE = Parameter
25
IC=5mA
dBm
IC =5mA
35 30 15
G
25 10 20 15 10 5 0 0 5
10V
10V 5V 1V
S21
5V
0
1V
1
2
3
4
5
GHz
7
-5 0
1
2
3
4
5
GHz
7
f
f
7
Aug-09-2001

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